WebNov 8, 2024 · Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity, thus representing an excellent material … http://www.tritts.com/Renegade
Electrical and Thermal Performance of Ga₂O₃ ... - IEEE Xplore
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A fast recovery sic ted mos mosfet with schottky barrier diode (sbd …
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